LH28F020SU-N Datasheet PDF - Sharp Electrionic Components 2M (256K bb 8) Flash Memory Specs

LH28F020SU-N - 2M (256K bb 8) Flash Memory

Datasheet Summary

Description

SYMBOL TYPE NAME AND FUNCTION BYTE-SELECT ADDRESSES: Select a byte within one 16K block.

These addresses are latched during Data Writes.

BLOCK-SELECT ADDRESSES: Select 1 of 16 Erase Blocks.

Features

32-PIN TSOP 2M (256K × 8) Flash Memory TOP VIEW.
256K × 8 Bit Configuration.
5 V Write/Erase Operation (5 V VPP).
No Requirement for DC/DC Converter to Write Erase A11 A9 A8 A13 A14 A17 WE VCC VPP A16 A15 A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 OE A10 CE DQ7 DQ6 DQ5 DQ4 DQ3 GND DQ2 DQ1 DQ0 A0 A1 A2 A3.
80 ns Maximum Access Time 16 Independently Lockable Blocks.

Datasheet Details

Part number	LH28F020SU-N
Manufacturer	Sharp Electrionic Components
File Size	241.40 KB
Description	2M (256K bb 8) Flash Memory
Datasheet	LH28F020SU-N Datasheet
Additional preview pages of the LH28F020SU-N datasheet.

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Full PDF Text Transcription

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LH28F020SU-N FEATURES 32-PIN TSOP 2M (256K × 8) Flash Memory TOP VIEW • 256K × 8 Bit Configuration • 5 V Write/Erase Operation (5 V VPP) – No Requirement for DC/DC Converter to Write Erase A11 A9 A8 A13 A14 A17 WE VCC VPP A16 A15 A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 OE A10 CE DQ7 DQ6 DQ5 DQ4 DQ3 GND DQ2 DQ1 DQ0 A0 A1 A2 A3 • • • • 80 ns Maximum Access Time 16 Independently Lockable Blocks (16K) 100,000 Erase Cycles per Block Automated Byte Write/Block Erase – Command User Interface – Status Register – Erase Suspend for Read – Two-Byte Write – Full Chip Erase • System Performance Enhancement • Data Protection – Hardware Erase/Write Lockout during Power Transitions – Software Erase/Write Lockout 28F020SUN80-1 Figur

Published: Mar 22, 2005 |