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LH28F020SU-L - 2M (256K bb 8) Flash Memory

Datasheet Summary

Description

SIGNAL TYPE NAME AND FUNCTION BYTE-SELECT ADDRESSES: Select a byte within one 16K block.

These addresses are latched during Data Writes.

BLOCK-SELECT ADDRESSES: Select 1 of 16 Erase Blocks.

Features

  • 32-PIN TSOP 2M (256K × 8) Flash Memory TOP VIEW.
  • 256K × 8 Bit Configuration.
  • 5 V Write/Erase (3.3 V VCC).
  • Access Time.
  • For 3.3 V Read: 150 ns A11 A9 A8 A13 A14 A17 WE VCC VPP A16 A15 A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 OE A10 CE DQ7 DQ6 DQ5 DQ4 DQ3 GND DQ2 DQ1 DQ0 A0 A1 A2 A3.
  • Minimum 2.7 V Read Capability.
  • 180 ns Maximum Access Time (VCC = 2.7 V).
  • 16 Indepen.

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Datasheet preview – LH28F020SU-L

Datasheet Details

Part number LH28F020SU-L
Manufacturer Sharp Electrionic Components
File Size 245.48 KB
Description 2M (256K bb 8) Flash Memory
Datasheet download datasheet LH28F020SU-L Datasheet
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LH28F020SU-L FEATURES 32-PIN TSOP 2M (256K × 8) Flash Memory TOP VIEW • 256K × 8 Bit Configuration • 5 V Write/Erase (3.3 V VCC) • Access Time – For 3.3 V Read: 150 ns A11 A9 A8 A13 A14 A17 WE VCC VPP A16 A15 A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 OE A10 CE DQ7 DQ6 DQ5 DQ4 DQ3 GND DQ2 DQ1 DQ0 A0 A1 A2 A3 • Minimum 2.7 V Read Capability – 180 ns Maximum Access Time (VCC = 2.7 V) • 16 Independently Lockable Blocks (16K Blocks) • 100,000 Erase Cycles per Block • Automated Byte Write/Block Erase – Command User Interface – Status Register • System Performance Enhancement – Erase Suspend for Read – Two-Byte Write – Full Chip Erase 28F020SUL15-1 Figure 1.
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