LH28F160S3H-L memories equivalent, 16m-bit (2mb x 8/1mb x 16) smart 3 flash memories.
* Smart 3 technology
– 2.7 V or 3.3 V VCC
– 2.7 V, 3.3 V or 5 V VPP
* High speed write performance
– Two 32-byte p.
having high programming performance is achieved through high-optimized page buffer operations. Their symmetrically-bloc.
The LH28F16S3-L/S3H-L flash memories with Smart 3 technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications, having high programming performance is achieved through high-optimized page buffer ope.
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