HFP730 - N-Channel Enhancement Mode Field Effect Transistor

Shantou Huashan Electronic

General Description

these power MOSFETs is designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.

Key Features

s 5.5A, 400V, RDS(on).

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HFP730 n-channel enhancement mode field effect transistor by Shantou Huashan Electronic - Datasheet Preview

Datasheet Details

Part number	HFP730
Manufacturer	Shantou Huashan Electronic
File Size	519.17 KB
Description	N-Channel Enhancement Mode Field Effect Transistor
Datasheet	HFP730 Datasheet

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www.DataSheet4U.com Shantou Huashan Electronic Devices Co.,Ltd. HFP730 N-Channel Enhancement Mode Field Effect Transistor █ General Description these power MOSFETs is designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. And DC-DC&DC-AC Converters for Telecom,Industrial and Consumer Environment TO-220 █ Features 5.5A, 400V, RDS(on) <1.