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9018 - Silicon NPN Transistor

This page provides the datasheet information for the 9018, a member of the 9018_ShanghaiSIM Silicon NPN Transistor family.

Datasheet Summary

Description

:The 9018 is designed for UHF general amplifier applications

Features

  • Excellent hFE Linearity.
  • Excellent fT characteristic Chip Appearance Chip Size Chip Thickness Bonding Pad Size Front Metal Backside Metal Scribe line width Wafer Size Base Emitter 360um×360um 210±20um φ65um φ65um AlSiCu Au (As) 50um 6 inch Electrical Characteristics( Ta=25℃) Characteristic Collector Cutoff Current Emitter Cutoff Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector Saturation Voltage Symbo.

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Datasheet preview – 9018

Datasheet Details

Part number 9018
Manufacturer Shanghai SIM-BCD Semiconductor
File Size 150.45 KB
Description Silicon NPN Transistor
Datasheet download datasheet 9018 Datasheet
Additional preview pages of the 9018 datasheet.

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    Full PDF Text Transcription

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    9018 9018 Silicon NPN Epitaxial Transistor Description :The 9018 is designed for UHF general amplifier applications Features: ●Excellent hFE Linearity ●Excellent fT characteristic Chip Appearance Chip Size Chip Thickness Bonding Pad Size Front Metal Backside Metal Scribe line width Wafer Size Base Emitter 360um×360um 210±20um φ65um φ65um AlSiCu Au (As) 50um 6 inch Electrical Characteristics( Ta=25℃) Characteristic Collector Cutoff Current Emitter Cutoff Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector Saturation Voltage Symbol ICBO IEBO BVCBO BVCEO BVEBO hFE VCE(sat) Test Condition VCB=20V, IE=0 VEB=3V, IC=0 IC=0.1mA IC=1mA IE=0.1mA VCE=5V, IC=1mA IC=10mA,IB=1mA 30 20 5 60 200 0.3 V Min Max 0.1 0.
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