Datasheet4U Logo Datasheet4U.com

STC5853 - P-Channel Enhancement Mode MOSFET

Description

The STC5853 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density.

advanced trench technology to provide excellent RDS(ON).

This high density process is especially tailored to minimize on-state resistance.

📥 Download Datasheet

Datasheet Details

Part number STC5853
Manufacturer Semtron
File Size 298.11 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet STC5853 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STC503D NPN Silicon Transistor KODENSHI KOREA
STC503F NPN Silicon Transistor KODENSHI KOREA
STC5230 Synchronous Clock Connor-Winfield
STC5551F NPN Silicon Transistor KODENSHI KOREA
STC5DNF30V Dual N-channel Power MOSFET ST Microelectronics

Other Datasheets by Semtron

Part Number Description
STC4545 30V Complementary MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
P-Channel Enhancement Mode MOSFET with Schottky Diode STC5853 P-Channel Enhancement Mode MOSFET with Schottky Diode ■DESCRIPTION The STC5853 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent RDS(ON). This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , and low in-line power loss are needed in a very small outline surface mount package. ■FEATURE MOSFET  -20V/-3.5A, RDS(ON) =70mΩ@VGS =-4.5V  -20V/-2.4A, RDS(ON) =95mΩ@VGS =-2.5V  -20V/-1.8A, RDS(ON) =125mΩ@VGS =-1.8V SCHOTTKY  VKA = 20V, VF=0.43V(Typ.
Published: |