25 (125) °C VCC = 600 V; VGE = ± 15 V td(on) IC = 15 A; Tj = 125 °C tr Rgon = Rgoff = 82 Ω td(off) tf inductive load Eon + Eoff Cies VCE = 25 V; VGE = 0 V, 1 MHz per IGBT Rthjh min.
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– typ. max. Units V 2,5(3,1) 3,0(3,7) ns 110 55 ns 110 55 ns 600 400 ns 90 45 mJ
– 7,8 n.