SKCD09C060I3 Datasheet | Semikron Danfoss

Features - low forward voltage drop bined with a low temperature dependence - easy paralleling due to a small forward voltage spread - very soft recovery behavior - small switching losses - high ruggedness - patible to thick wire bonding - patible to all standard solder processes Dynamic Characteristics Symbol trr trr Qrr Qrr Irrm Irrm Conditions Tj = 25 °C, 10 A, 300 V, 200 A/µs Tj = 125 °C, 10 A, 300 V, 200 A/µs Tj = 25 °C, 10 A, 300 V, 200 A/µs Tj = 125 °C, 10 A, 300 V, 200 A/µs Tj = 25 °C, 10 A, 300 V, 200 A/µs Tj = 125 °C, 10 A, 300 V, 200 A/µs min. typ. max. Unit µs ns 0.8 1.2 8 µC µC A A Typical Applications- - freewheeling diode for IGBT Thermal Characteristics Symbol Tj Tstg Tsolder Tsolder Rth(j-s) 10 min. 5 min. sold. on 0,38 mm DCB, reference point on copper heatsink close to the chip 2.11 Conditions min. -40 -40 typ. max. 150 150 250 320 Unit °C °C °C °C K/W Mechanical Characteristics Symbol Raster size Area total Anode Cathode Wire bond Package Chips / Package Conditions Values 2.95 x 2.95 8.70 bondable (Al) solderable (Ag/Ni) Al, diameter ≤ 500 µm wafer frame 1171 (5" Wafer) Unit mm2 mm2 pcs SKCD © by SEMIKRON Rev. 0 - 18.02.2010 1 SKCD 09 C 060 I3 This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX - The specifications of our ponents may not be considered as an assurance of ponent characteristics. ponents have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly remend prior consultation of our personal. Rev. 0 - 18.02.2010 © by...