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SEMiX353GD176HDc
Absolute Maximum Ratings Symbol
IGBT VCES IC ICnom ICRM ICRM = 2xICnom VCC = 1000 V VGE ≤ 20 V VCES ≤ 1700 V VGES tpsc Tj Inverse diode IF Tc = 25 °C Tc = 80 °C Tj = 125 °C Tj = 150 °C Tc = 25 °C Tc = 80 °C 1700 353 251 225 450 -20 ... 20 10 -55 ... 150 428 289 225 IFRM = 2xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 450 1800 -40 ... 150 600 -40 ... 125 AC sinus 50Hz, t = 1 min 4000 V A A A A V µs °C A A A A A °C A °C V
Conditions
Values
Unit
SEMiX® 33c
Trench IGBT Modules
SEMiX353GD176HDc
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Tj = 150 °C
IFnom IFRM IFSM Tj Module It(RMS) Tstg Visol
Features
• Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • UL recognised file no.
SEMIX353GD176HDC Datasheet
