Datasheet4U Logo Datasheet4U.com

SEMIX201GD066HDS - Trench IGBT

Key Features

  • Homogeneous Si.
  • Trench = Trenchgate technology.
  • VCE(sat) with positive temperature coefficient.
  • UL recognised file no. E63532 Typical.

📥 Download Datasheet

Full PDF Text Transcription for SEMIX201GD066HDS (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SEMIX201GD066HDS. For precise diagrams, tables, and layout, please refer to the original PDF.

View original datasheet text
SEMiX201GD066HDs SEMiX® 13 Trench IGBT Modules SEMiX201GD066HDs Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • UL recognised file no. E63532 Typical Applications* • Matrix Converter • Resonant Inverter • Current Source Inverter Remarks • Case temperature limited to TC=125°C max.