SKM200GBD123D1S igbt equivalent, igbt.
* MOS input (voltage controlled)
* N channel, Homogeneous Si
* Low inductance case
* Very low tail current with low
temperature dependence
* High shor.
* Switching (not for linear use)
* Resonant inverters 1) Tcase = 25 °C, unless otherwise specified 2) IF =
.
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