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SKFT150 - Fast Thyristor/ Diode Modules

Features

  • Heat transfer through ceramic isolated metal baseplate.
  • Interdigitated amplifying gates.
  • Precious metal pressure contacts.
  • UL recognition, file no. E63 532 Typical.

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Datasheet Details

Part number SKFT150
Manufacturer Semikron
File Size 288.86 KB
Description Fast Thyristor/ Diode Modules
Datasheet download datasheet SKFT150 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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VDRM VRRM V 800 1000 tq (Tvj = 125 °C) µs ITRMS (maximum values for continuous operation) 350 A ITAV (sin. 180; Tcase = 76 °C; 50 Hz) 150 A 15 SKFT 150/08 DS SKFH 150/08 DS 20 SKFT 150/08 DT SKFH 150/08 DT 15 SKFT 150/10 DS 1) – SEMIPACK® 3 Fast Thyristor/ Diode Modules SKFT 150 SKFH 150 Thyristor data Symbol Conditions ITM sin. 180; Tcase = 60 °C; 500 Hz ITSM Tvj = 25 °C; 10 ms Tvj = 125 °C; 10 ms i2t Tvj = 25 °C; 8,3 ... 10 ms Tvj = 125 °C; 8,3 ... 10 ms tgd Tvj = 25 °C; Ig = 1 A; diG/dt = 1 A/µs tgr VD = 0,67 . VDRM (di/dt)cr non-repetitive/f = 50 . . . 60 Hz (dv/dt)cr Tvj = 125 °C IH Tvj = 25 °C; typ./max. IL Tvj = 25 °C; RG = 33 Ω; typ./max. VT VT(TO) rT ID; IR Tvj = 125 °C; IT = 1200 A; max.
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