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SK25DGDL12T7ETE1s - IGBT

Features

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  • Optimized design for superior thermal performance.
  • Low inductive design.
  • Solder contact technology.
  • 1200V Generation 7 IGBT (T7).
  • Robust and soft switching CAL4F diode technology.
  • PEP rectifier diode technology for enhanced power and environmental robustness.
  • Integrated NTC temperature sensor.
  • UL recognized file no. E 63 532 Typical.

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Datasheet Details

Part number SK25DGDL12T7ETE1s
Manufacturer Semikron
File Size 963.18 KB
Description IGBT
Datasheet download datasheet SK25DGDL12T7ETE1s Datasheet
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Full PDF Text Transcription

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SK25DGDL12T7ETE1s SEMITOP®E1 Solder 3-phase Converter-Inverter-Brake (CIB) Engineering Sample SK25DGDL12T7ETE1s Target Data Features* • Optimized design for superior thermal performance • Low inductive design • Solder contact technology • 1200V Generation 7 IGBT (T7) • Robust and soft switching CAL4F diode technology • PEP rectifier diode technology for enhanced power and environmental robustness • Integrated NTC temperature sensor • UL recognized file no. E 63 532 Typical Applications • Motor drives • Air conditioning • Auxiliary Inverters Remarks • Recommended Tj,op=-40 ...+150 °C Absolute Maximum Ratings Symbol Conditions Inverter - IGBT VCES IC Tj = 25 °C λpaste=0.8 W/(mK) Tj = 175 °C Ts = 25 °C Ts = 70 °C IC λpaste=2.
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