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SK150MLI07S5TD1E2 - IGBT

Key Features

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  • Optimized design for superior thermal performance.
  • Low inductive design.
  • Press-Fit contact technology.
  • Split IGBT gates for optimized driving.
  • 650V Trench5 IGBT (S5/L5).
  • Rapid switching diode technology.
  • Integrated NTC temperature sensor.
  • UL recognized file no. E 63 532 Typical.

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Full PDF Text Transcription (Reference)

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SK150MLI07S5TD1E2 SEMITOP®E2 3-Level NPC SK150MLI07S5TD1E2 Features* • Optimized design for superior thermal performance • Low inductive design • Press-Fit contact technology • Split IGBT gates for optimized driving • 650V Trench5 IGBT (S5/L5) • Rapid switching diode technology • Integrated NTC temperature sensor • UL recognized file no. E 63 532 Typical Applications • UPS • Solar Remarks* • Recommended Tj,op=-40 ...+150 °C • IGBTs characteristics are valid for paralleled chips (split gates connected) • IGBT1: outer IGBTs T1 & T4 • IGBT2: inner IGBTs T2 & T3 • Diode1: outer Diodes D1 & D4 • Diode2: inner Diodes D2 & D3 • Diode5: clamping Diodes D5 & D6 Footnotes 1) Please find further technical information on the SEMIKRON website.