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SQ5109 - Chip Type 2C5109 Geometry 1007 Polarity NPN

Features

  • Special Characteristics ft = 1200 MHz (typ) at 50 mA/15V 2N5109, 2N5109UB, SD5109, SD5109F, SQ5109, SQ5109F Mechanical Specifications Metallization Bonding Pad Size Die Thickness Chip Area Top Surface Top Backside Emitter Base Al - 15 kÅ min. Au - 6.5 kÅ nom. 3.4 mils x 3.0 mils 3.4 mils x 3.0 mils 8 mils nominal 15 mils x 20 mils Silox Passivated Electrical Characteristics TA = 25oC Parameter BVCER BVCEO ICEO IEBO hFE1 hFE2 Test conditions IC = 5.0 mA, RBE = 10 Ohms IC = 5.0 mA VCE = 15 V.

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Datasheet Details

Part number SQ5109
Manufacturer Semicoa Semiconductor
File Size 31.03 KB
Description Chip Type 2C5109 Geometry 1007 Polarity NPN
Datasheet download datasheet SQ5109 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Data Sheet No. 2C5109 Chip Type 2C5109 Geometry 1007 Polarity NPN Generic Packaged Parts: 2N5109 Chip type 2C5109 by Semicoa Semiconductors provides performance similar to these devices. Part Numbers: Product Summary: APPLICATIONS: Designed for broadband applications. Usable as high frequency current mode switch to 200 mA. Features: Special Characteristics ft = 1200 MHz (typ) at 50 mA/15V 2N5109, 2N5109UB, SD5109, SD5109F, SQ5109, SQ5109F Mechanical Specifications Metallization Bonding Pad Size Die Thickness Chip Area Top Surface Top Backside Emitter Base Al - 15 kÅ min. Au - 6.5 kÅ nom. 3.4 mils x 3.0 mils 3.4 mils x 3.0 mils 8 mils nominal 15 mils x 20 mils Silox Passivated Electrical Characteristics TA = 25oC Parameter BVCER BVCEO ICEO IEBO hFE1 hFE2 Test conditions IC = 5.
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