SFD60N03L Description
VDD =15V, ID =30A, RG =50Ω ※ see fig. (Note 4, 5) Source-Drain Diode Ratings and Characteristics Symbol IS ISM VSD trr Qrr Parameter Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Test Conditions Integral Reverse p-n Junction Diode in the MOSFET IS =48A, VGS =0V IS=60A,VGS=0V,dIF/dt=100A/us Min. pulse width limited by junction temperature.