HTA55A160BW Datasheet | SemiHow

FEATURES  Repetitive Peak Off-State Voltage : 1600V  R.M.S On- State Current (IT(RMS) = 55A)  Gate Trigger Current : 50m A General Description HTA55A160BW triacs, with high ability to withstand the shock loading of large current, provide high dv/dt rate with strong resistance to electromagnetic interface. With high mutation performances, 3 quadrants products especially remended for use on inductive load. VDRM = 1600 V IT(RMS) = 55 A ITSM = 550 A IGT(max) = 50m A Symbol TO-247S T1 T2 G Absolute Maximum Ratings (TJ=25℃ unless otherwise specified ) Symbol Parameter Conditions VDRM VRRM VDSM VRSM IT(AV) IT(RMS) Repetitive Peak Off-State Voltage Repetitive Peak Reverse Voltage Non Repetitive Peak Off-State Voltage Non Repetitive Peak Reverse Voltage Average On-State Current R.M.S. On-State Current Sine wave, 50/60Hz, Gate open TJ = 25 °C, tp = 10ms Full sine wave, TC = 73o C ITSM Surge On-State Current Full cycle, 50Hz, Sine wave, Non repetitive I2t d I/dt IGM PGM PG(AV) TJ TSTG Fusing Current Critical Rate of Rise of On-State Current Peak Gate Current Peak Gate Power Dissipation Average Gate Power Dissipation Operating Junction Temperature Storage Temperature t = 10ms IG = 2 x IGT , tr ≤ 100ns, f = 120Hz, TJ = 125 °C TJ = 125 °C, tp = 20us TJ = 125 °C, tp = 20us TJ = 125 °C Ratings Unit 1600 1600 VDRM+100 VRRM+100 45 50 V V V V A A 550 A A2S 100 A/us 8A 10 W 2 -40~+125 -40~+150 W o C o C ◎ SEMIHOW REV.A0,Jan 2016 Electrical Characteristics (TC=25℃ unless otherwise specified...