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HRS50N06K - N-Channel MOSFET

Features

  • ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 40 nC (Typ. ) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 11.5 Pȍ (Typ. ) @VGS=10V ‰ 100% Avalanche Tested July 2014 BVDSS = 60 V RDS(on) typ Pȍ ID = 40 A TO-220F 12 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS EAR PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain.

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Datasheet Details

Part number HRS50N06K
Manufacturer SemiHow
File Size 172.23 KB
Description N-Channel MOSFET
Datasheet download datasheet HRS50N06K Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HRS50N06K HRS50N06K 60V N-Channel Trench MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 40 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 11.5 Pȍ (Typ.) @VGS=10V ‰ 100% Avalanche Tested July 2014 BVDSS = 60 V RDS(on) typ Pȍ ID = 40 A TO-220F 12 3 1.Gate 2. Drain 3.
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