The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
HFD5N60U_HFU5N60U
HFD5N60U / HFU5N60U
600V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 2.0 ȍ 7S #9GS=10V 100% Avalanche Tested
Jan 2014
BVDSS = 600 V RDS(on) typ = 2.0 ȍ ID = 3.6 A
D-PAK I-PAK
2
1 3
HFD5N60U
1 2 3
HFU5N60U
1.Gate 2. Drain 3.
HFU5N60U Datasheet
