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HFD5N50U_HFU5N50U
HFD5N50U / HFU5N50U
500V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 13 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ 7S #9GS=10V 100% Avalanche Tested
May 2014
BVDSS = 500 V RDS(on) typ ȍ ID = 4.0 A
D-PAK I-PAK
2
1 3
HFD5N50U
1 2 3
HFU5N50U
1.Gate 2. Drain 3.
HFU5N50U Datasheet
