HFS8N65U - N-Channel MOSFET

SemiHow

Key Features

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22.0 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested March 2013 BVDSS = 650 V RDS(on) typ ȍ ID = 7.5 A TO-220F 12 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM.

HFS8N65U n-channel mosfet by SemiHow - Datasheet Preview

Datasheet Details

Part number	HFS8N65U
Manufacturer	SemiHow
File Size	308.18 KB
Description	N-Channel MOSFET
Datasheet	HFS8N65U Datasheet

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HFS8N65U HFS8N65U 650V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22.0 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested March 2013 BVDSS = 650 V RDS(on) typ ȍ ID = 7.5 A TO-220F 12 3 1.Gate 2. Drain 3.