HFD5N50S - N-Channel MOSFET

SemiHow

Features

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 15.5 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD5N50S 1 2 3 HFU5N50S 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Dr.

HFD5N50S n-channel mosfet by SemiHow - Datasheet Preview

Datasheet Details

Part number	HFD5N50S
Manufacturer	SemiHow
File Size	279.46 KB
Description	N-Channel MOSFET
Datasheet	HFD5N50S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HFD5N50S_HFU5N50S OCT 2009 HFD5N50S / HFU5N50S 500V N-Channel MOSFET BVDSS = 500 V RDS(on) typ ȍ ID = 4.0 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 15.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD5N50S 1 2 3 HFU5N50S 1.Gate 2. Drain 3.

Published: Jun 7, 2015 |