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HFC1N60 N-Channel MOSFET

HFC1N60 Description

HFC1N60 Sep 2006 HFC1N60 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 0.5 A .

HFC1N60 Features

* ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 4.0 nC (Typ. ) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7S #9GS=10V ‰ 100% Avalanche Test

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Datasheet Details

Part number
HFC1N60
Manufacturer
SemiHow
File Size
195.17 KB
Datasheet
HFC1N60-SemiHow.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET SemiHow
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