HFC1N60 - N-Channel MOSFET

SemiHow

Features

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 4.0 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested TO-126 1 23 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current.

HFC1N60 n-channel mosfet by SemiHow - Datasheet Preview

Datasheet Details

Part number	HFC1N60
Manufacturer	SemiHow
File Size	195.17 KB
Description	N-Channel MOSFET
Datasheet	HFC1N60 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
HFC1005	high frequency ceramic capacitor	KOA
HFC1410	high frequency ceramic capacitor	KOA
HFC1608	high frequency ceramic capacitor	KOA
HFC1610	high frequency ceramic capacitor	KOA
HFC1612	high frequency ceramic capacitor	KOA

Other Datasheets by SemiHow

Part Number	Description
HFC1N70	N-Channel MOSFET
HFC1N80	N-Channel MOSFET
HFC2N60U	600V N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text

HFC1N60 Sep 2006 HFC1N60 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 0.5 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 4.0 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested TO-126 1 23 1.Gate 2. Drain 3.

Published: Jun 7, 2015 |