HCS70R600S
HCS70R600S is N-Channel Super Junction MOSFET manufactured by SemiHow.
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 16 n C (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested
November 2014
BVDSS = 700 V RDS(on) typ = 0.54 ȍ ID = 7.3 A
TO-220F
12 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS ID IDM VGS
Drain-Source Voltage
Drain Current Drain Current Drain Current
- Continuous (TC = 25)
- Continuous (TC = 100)
- Pulsed
(Note 1)
Gate-Source Voltage
Static AC (f>1 Hz)
700 7.3
- 4.6
- 22
- ρ20 ρ30
EAS IAR EAR dv/dt
Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt
(Note 2) (Note 1) (Note 1)
120 2.0 0.5 15
Power Dissipation (TC = 25)
- Derate above 25
30 0.24
TJ, TSTG TL
Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
-55 to +150 300
- Drain current limited by maximum junction temperature
Thermal Resistance Characteristics
Symbol RșJC RșJA
Parameter Junction-to-Case Junction-to-Ambient
Typ....
