Datasheet Summary
650V N-Channel Super Junction MOSFET
Features
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 23 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested
November 2014
BVDSS = 650 V RDS(on) typ = 0.32 ȍ ID = 11 A
TO-220F
12 3
1.Gate 2. Drain 3....