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HCS65R360S Datasheet SemiHow

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Features and Benefits

‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 23 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7S #9GS=10V ‰ 100% Avalanche Test.

HCS65R360S HCS65R360S HCS65R360S
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N-Channel
Super
Junction
MOSFET
HCS65R360S
HCS65R380T
HCS65R160T
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