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SML100H9 - N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

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Part number SML100H9
Manufacturer Seme LAB
File Size 26.97 KB
Description N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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SML100H9 TO–258 Package Outline. Dimensions in mm (inches) 17.65 (0.695) 17.39 (0.685) 6.86 (0.270) 6.09 (0.240) 1.14 (0.707) 0.88 (0.035) 17.96 (0.707) 17.70 (0.697) 13.84 (0.545) 13.58 (0.535) 1 2 3 4.19 (0.165) 3.94 (0.155) Dia. 21.21 (0.835) 20.70 (0.815) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS VDSS 1000V 9A ID(cont) RDS(on) 1.100Ω 3.56 (0.140) BSC 19.05 (0.750) 12.70 (0.500) 5.08 (0.200) BSC 1.65 (0.065) 1.39 (0.055) Typ. Pin 1 – Drain Pin 2 – Source Pin 3 – Gate • Faster Switching • Lower Leakage • TO–258 Hermetic Package D G S StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance.
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