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SML100B11 - N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

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Part number SML100B11
Manufacturer Seme LAB
File Size 21.13 KB
Description N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
Datasheet download datasheet SML100B11 Datasheet

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Full PDF Text Transcription

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SML100B11 TO–247AD Package Outline. Dimensions in mm (inches) 4.69 5.31 1.49 2.49 (0.185) (0.209) (0.059) (0.098) 6.15 (0.242) BSC 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 3.55 (0.140) 3.81 (0.150) 1 2 3 1.65 (0.065) 2.13 (0.084) 2.87 (0.113) 3.12 (0.123) 0.40 (0.016) 0.79 (0.031) 1.01 (0.040) 1.40 (0.055) VDSS 1000V 11A ID(cont) RDS(on) 1.000W • • • • Faster Switching Lower Leakage 100% Avalanche Tested Popular TO–247 Package 2.21 (0.087) 2.59 (0.102) 19.81 (0.780) 20.32 (0.800) 4.50 (0.177) M ax. 5.25 (0.215) BSC Pin 1 – Gate Pin 2 – Drain Pin 3 – Source D G S StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs.
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