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SML1001R3AN - N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

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Part number SML1001R3AN
Manufacturer Seme LAB
File Size 60.94 KB
Description N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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LAB TO3 Package Outline. Dimensions in mm (Inches) SEME SML1001R1AN SML901R1AN SML1001R3AN SML901R3AN 1000V 900V 1000V 900V 9.5A 9.5A 8.5A 8.5A 1.10W 1.10W 1.30W 1.30W POWER MOS IV™ N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS (Tcase =25°C unless otherwise stated) Parameter VDSS ID IDM VGS PD TJ , TSTJ Drain – Source Voltage Continuous Drain Current Pulsed Drain Current 1 Gate – Source Voltage Total Power Dissipation @ Tcase = 25°C Derate above 25°C Operating and Storage Junction Temperature Range 901R1AN 900 9.5 38 ±30 230 SML 1001R1AN 901R3AN 1000 900 8.
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