SML1001R3AN Overview
1000 900 250 1000 ±100 Typ. Unit V BVDSS IDSS IGSS ID(ON) mA nA A V VGS(TH) Gate Threshold Voltage RDS(ON) W 1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
| Part number | SML1001R3AN |
|---|---|
| Datasheet | SML1001R3AN_SemeLAB.pdf |
| File Size | 60.94 KB |
| Manufacturer | Seme LAB |
| Description | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
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1000 900 250 1000 ±100 Typ. Unit V BVDSS IDSS IGSS ID(ON) mA nA A V VGS(TH) Gate Threshold Voltage RDS(ON) W 1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
| Part Number | Description |
|---|---|
| SML1001R1AN | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML1001RHN | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML100A9 | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML100B11 | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML100B13 | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML100C4 | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML100H11 | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML100H9 | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML100J19 | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML100J22 | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |