D1202 METAL GATE RF SILICON FET
• SIMPLIFIED AMPLIFIER DESIGN
M
I
E
K
G
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW Crss
• USEFUL PO AT 1GHz
DP
PIN 1 PIN 3 SOURCE GATE PIN 2 .
• LOW Crss • USEFUL PO AT 1GHz DP PIN 1 PIN 3 SOURCE GATE PIN 2 DRAIN DIM mm A 16.51 B 6.35 C 45° .
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