D1024UK fet equivalent, metal gate rf silicon fet.
PI
N
OH
* SIMPLIFIED AMPLIFIER DESIGN
PIN 1 PIN 3 PIN 5 PIN 7
DD
SOURCE (COMMON) PIN 2
DRAIN 2
PIN 4
SOURCE (COMMON) PIN 6
GATE 1
PIN 8
DRAIN 1 SOURCE (C.
* LOW Crss
* USEFUL PO at 1 GHz
* LOW NOISE
* HIGH GAIN
– 13 dB MINIMUM
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