D1002UK METAL GATE RF SILICON FET
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN
– 16 dB MINIMUM
APPLICA.
• LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 16 dB MINIMUM APPLICATIONS • HF/VHF/UHF .
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