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2N6317 - COMPLEMENTARY SILICON MEDIUM POWER TRANSISTORS

This page provides the datasheet information for the 2N6317, a member of the 2N6315 COMPLEMENTARY SILICON MEDIUM POWER TRANSISTORS family.

Features

  • Low Collector Emitter Saturation Voltage.
  • Low Leakage Current.
  • Excellent DC Current Gain.

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Datasheet preview – 2N6317

Datasheet Details

Part number 2N6317
Manufacturer Seme LAB
File Size 16.21 KB
Description COMPLEMENTARY SILICON MEDIUM POWER TRANSISTORS
Datasheet download datasheet 2N6317 Datasheet
Additional preview pages of the 2N6317 datasheet.

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Full PDF Text Transcription

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MECHANICAL DATA Dimensions in mm (inches) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. 12 2N6315 2N6317 6.35 (0.250) 8.64 (0.340) COMPLEMENTARY SILICON MEDIUM POWER TRANSISTORS COMPLEMENTARY TRANSISTORS 2N6315 (NPN) AND 2N6317 (PNP) 24.13 (0.95) 24.63 (0.97) 14.48 (0.570) 14.99 (0.590) 0.71 (0.028) 0.86 (0.034) 11.94 (0.470) 12.70 (0.500) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. 1.27 (0.050) 1.91 (0.750) Pin 1 –Base TO–66 (TO-213AA) Pin 2 –Emitter Case – Collector FEATURES • Low Collector Emitter Saturation Voltage • Low Leakage Current • Excellent DC Current Gain APPLICATIONS: Designed for general purpose amplifier and switching applications.
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