2N6301 transistors equivalent, darlington silicon power transistors.
* High DC Current Gain
* Monolithic Construction with Built-in Base
–Emitter Shunt Resistors
ABSOLUTE MAXIMUM RATINGS(Tc = 25°C unless otherwise s.
24.13 (0.95) 24.63 (0.97) 14.48 (0.570) 14.99 (0.590)
0.71 (0.028) 0.86 (0.034) 11.94 (0.470) 12.70 (0.500)
4.83 (0.1.
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