2N6301, 2N6300 Datasheet - Seme LAB

2N6301 DARLINGTON SILICON POWER TRANSISTORS

2N6300 2N6301 MECHANICAL DATA Dimensions in mm (inches) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. 12 6.35 (0.250) 8.64 (0.340) DARLINGTON SILICON POWER TRANSISTORS Designed for general purpose amplifier and low frequency switching applications. 24.13 (0.95) 24.63 (0.97) 14.48 (0.570) 14.99 (0.590) 0.71 (0.028) 0.86 (0.034) 11.94 (0.470) 12.70 (0.500) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. 1.27 (0.050) 1.91 (0.750) Pin 1 Base TO 66 (TO-213AA) Pin 2

2N6301 Features

* High DC Current Gain

* Monolithic Construction with Built-in Base

* Emitter Shunt Resistors ABSOLUTE MAXIMUM RATINGS(Tc = 25°C unless otherwise stated) 2N6300 2N6301 VCEO Collector

* Emitter Voltage 60V 80V VCBO Collector

* Base Voltage 60V 80V VEBO

2N6300-SemeLAB.pdf

2N6301 Datasheet Preview — This datasheet PDF includes multiple part numbers: 2N6301, 2N6300. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

2N6301, 2N6300

Manufacturer:

Seme LAB

File Size:

20.75 KB

Description:

Darlington silicon power transistors.

Note:

This datasheet PDF includes multiple part numbers: 2N6301, 2N6300.
Please refer to the document for exact specifications by model.

2N6301 Distributor

📁 Related Datasheet

2N6300 NPN Darlington Power Silicon Transistor (VPT)

2N6300 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS (Central Semiconductor)

2N6300 PNP DARLINGTON POWER SILICON TRANSISTOR (Microsemi)

2N6300 Silicon NPN Power Transistors (Savantic)

2N6300 DARLINGTON SILICON POWER TRANSISTORS (Seme LAB)

2N6301 NPN Darlington Power Silicon Transistor (VPT)

2N6301 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS (Central Semiconductor)

2N6301 PNP DARLINGTON POWER SILICON TRANSISTOR (Microsemi)

TAGS

2N6301 2N6300 DARLINGTON SILICON POWER TRANSISTORS Seme LAB