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2N6301 Datasheet - Seme LAB

2N6301 DARLINGTON SILICON POWER TRANSISTORS

2N6300 2N6301 MECHANICAL DATA Dimensions in mm (inches) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. 12 6.35 (0.250) 8.64 (0.340) DARLINGTON SILICON POWER TRANSISTORS Designed for general purpose amplifier and low frequency switching applications. 24.13 (0.95) 24.63 (0.97) 14.48 (0.570) 14.99 (0.590) 0.71 (0.028) 0.86 (0.034) 11.94 (0.470) 12.70 (0.500) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. 1.27 (0.050) 1.91 (0.750) Pin 1 Base TO 66 (TO-213AA) Pin 2

2N6301 Features

* High DC Current Gain

* Monolithic Construction with Built-in Base

* Emitter Shunt Resistors ABSOLUTE MAXIMUM RATINGS(Tc = 25°C unless otherwise stated) 2N6300 2N6301 VCEO Collector

* Emitter Voltage 60V 80V VCBO Collector

* Base Voltage 60V 80V VEBO

2N6301 Datasheet (20.75 KB)

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Datasheet Details

Part number:

2N6301

Manufacturer:

Seme LAB

File Size:

20.75 KB

Description:

Darlington silicon power transistors.

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2N6301 DARLINGTON SILICON POWER TRANSISTORS Seme LAB

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