Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available 2 Drain REF. A b L4 C L3 L1.

. TO-263 FEATURES Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 1.

The SSU07N65SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications . TO-263 FEATURES Advanced high cell density Tren.

SSU04N65

SSU102N08S-C

SSU12N70H-C

SSU130N06S-C

SSU130N06SV-C

SSU1N50B

SSU1N60A

SSU1N60B

SSU24N60H-C

SSU2N60A

SSU2N60B

SSU3055A

SSU40N01

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts