SSRF12N65SL datasheet, mosfet equivalent, SeCoS Halbleitertechnologie

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datasheet Download (Size : 544.30KB)

Features and benefits

Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available 2 Drain M A H J K L Mill.

Application

. ITO-220 B N D E FEATURES Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effe.

Description

The SSRF12N65SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications . ITO-220 B N D E FEATURES Advanced high cell.

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