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STT6602 Datasheet MOSFET

Manufacturer: SeCoS Halbleitertechnologie GmbH

Overview: STT6602 Elektronische Bauelemente N-Ch: 3.3A, 30V, RDS(ON) 65 mΩ P-Ch: -2.3A, -30V, RDS(ON) 120 mΩ N & P-Channel Enhancement Mode Mos.

General Description

The STT6602 uses advanced trench technology to provide excellent on-resistance and low gate charge.

The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.

The TSOP-6 package is universally used for all commercial-industrial surface mount applications.

Key Features

  • Low Gate Change Low On-resistance 1 2 3 F DG K C H J.