STT3962N - N-Channel MOSFET

SeCoS

General Description

These miniature surface mount MOSFETs utilize High Cell Density process.

Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry.

Key Features

Low RDS(on) provides higher efficiency and extends battery life.
Miniature TSOP-6 surface mount package saves board space. 123 F DG K C H J.

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STT3962N n-channel mosfet by SeCoS - Datasheet Preview

Datasheet Details

Part number	STT3962N
Manufacturer	SeCoS
File Size	430.76 KB
Description	N-Channel MOSFET
Datasheet	STT3962N Datasheet

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Other Datasheets by SeCoS

Part Number	Description
STT3962NE	N-Channel MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente STT3962N N-Channel Enhancement Mode Mos.FET 2.3 A, 60 V, RDS(ON) 0.153  RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are DC-DC converters, power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. TSOP-6 A E L 654 B FEATURES  Low RDS(on) provides higher efficiency and extends battery life.  Miniature TSOP-6 surface mount package saves board space. 123 F DG K C H J PRODUCT SUMMARY PRODUCT SUMMARY VDS(V) 60 RDS(on) ( 0.