STT3471P Datasheet | SeCoS Halbleitertechnologie GmbH

DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. 6 5 4 TSOP-6 FEATURES - - - - Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe TSOP-6 saves board space. Fast switching speed. High performance trench technology. F DG APPLICATION DC-DC converters and power management in portable and battery-powered products such as puters, printers, PCMCIA cards, cellular and cordless telephones. REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.40 1.80 1.10 MAX. 1.90 REF. 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0 0.10 0.60 REF. 0.12 REF. 0° 10° 0.95 REF. PACKAGE INFORMATION Package TSOP-6 MPQ 3K Leader Size 7’ inch ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) Power Dissipation 1 Operating Junction and Storage Temperature Range Symbol VDS VGS TA= 25°C TA= 70°C ID IDM IS TA= 25°C TA= 70°C PD Tj, Tstg Rating -100 ±20 2.0 1.6 -8 -2.1 2.0 1.3 -55~150 Unit V V A A A W °C Thermal Resistance Rating Maximum Junction to Ambient 1 t ≦ 5 sec RJA 62.5 110 °C / W Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. http://.Se Co SGmb H./ Any changes of specification will not be informed individually. 08-Apr-2011 Rev....