Datasheet4U Logo Datasheet4U.com

STT3457P - P-Channel MOSFET

General Description

These miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation.

Key Features

  • C K H J.
  • Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe TSOP-6 saves board space. Fast switching speed High performance trench technology DG REF. A B C D E F.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STT3457P Elektronische Bauelemente -4 A, -30 V, RDS(ON) 60 m P-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. F A E 6 5 4 TSOP-6 L B 1 2 3 FEATURES  C K H J    Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe TSOP-6 saves board space. Fast switching speed High performance trench technology DG REF.