STT3457P Datasheet | SeCoS Halbleitertechnologie GmbH

PTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as puters, printers, PCMCIA cards, cellular and cordless telephones. 6 5 4 TSOP-6 Features - C K - - - Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe TSOP-6 saves board space. Fast switching speed High performance trench technology REF. A B C D E F PACKAGE INFORMATION Package TSOP-6 MPQ 3K Leader Size 7’ inch Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.40 1.80 1.10 MAX. 1.90 REF. 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0 0.10 0.60 REF. 0.12 REF. 0° 10° 0.95 REF. ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 2 1 Symbol VDS VGS TA= 25°C TA= 70°C Ratings -30 ±20 -4 -3.2 -20 -1.7 2 1.3 -55 ~ 150 62.5 110 Unit V V A A A W °C ID IDM IS Pulsed Drain Current Continuous Source Current (Diode Conduction) 1 Power Dissipation TA= 25°C TA= 70°C Operating Junction and Storage Temperature Range Maximum Junction to Ambient 1 Tj, Tstg Thermal Resistance Ratings t ≦ 5 sec Steady State RJA °C /...