SSU50N10
SSU50N10 is N-Ch Enhancement Mode Power MOSFET manufactured by SeCoS Halbleitertechnologie GmbH.
PTION
The SSU50N10 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications .
Features
Advanced high cell density Trench technology Super Low Gate Charge Excellent Cd V/dt effect decline 100% EAS and 100% Rg Guaranteed Green Device Available
TO-263
MARKING
50N10
Date Code
PACKAGE INFORMATION
Package
TO-263
0.8K
Leader Size 13 inch
Gate
Drain
Source
REF.
A b L4 c L3 L1 E
Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.00 0.30 0.36 0.5
1.50 REF 2.29 2.79 9.80 10.4
REF. c2 b2 D e L θ L2
Millimeter Min. Max.
1.17 1.45 1.1 1.47 8.5 9.0
2.54 REF 14.6 15.8
0° 8° 1.27 REF
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Rating
Drain-Source...
