Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS and 100% Rg Guaranteed Green Device Available TO-263 MARKING.

. FEATURES Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS a.

The SSU50N10 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications . FEATURES Advanced high cell density Trench technolo.

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