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SST2603 - P-Channel MOSFET

Description

The SST2603 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.

Features

  • Small package outline.
  • Simple drive requirement Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 Continuous Drain Current 3 Pulsed Drain Current 1,2 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range D G S Symbol VDS VGS ID@TA=25 oC ID@TA=70 oC IDM PD@TA=25 oC Tj, Tstg SOT-26 1.90REF 0.95REF 0.95REF 0.45 REF 2.60 3.00 1.2 REF 0.60 REF 1.40 1.80 0.30 0.55 2.70 0.10 Max 3.10 o 0 0.

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Datasheet preview – SST2603

Datasheet Details

Part number SST2603
Manufacturer SeCoS
File Size 939.70 KB
Description P-Channel MOSFET
Datasheet download datasheet SST2603 Datasheet
Additional preview pages of the SST2603 datasheet.

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Full PDF Text Transcription

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Elektronische Bauelemente SST2603 -5A, -20V,RDS(ON) 65mΩ P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The SST2603 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SST2603 is universally used for all commercial industrial surface mount application and suited for low voltage applications such as DC/DC converters.
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