SSQ07N60J mosfet equivalent, n-channel mosfet.
Robust High Voltage Termination Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is characterized for The.
in power suppliers, converters and PWM motor controls, these devices are particularly well suited for bridge circuits wh.
The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation m.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 466.07KB)