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SSPR47N10S-C - N-Channel Enhancement Mode Power MOSFET

Description

The SSPR47N10S-C is the highest performance trench N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.

Features

  • Advanced High Cell Density Trench Technology.
  • Super Low Gate Charge.
  • Green Device Available.

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Datasheet Details

Part number SSPR47N10S-C
Manufacturer SeCoS
File Size 576.57 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet SSPR47N10S-C Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SSPR47N10S-C 47A, 100V, RDS(ON) 9.8mΩ N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSPR47N10S-C is the highest performance trench N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SSPR47N10S-C meet the RoHS and Green Product requirement with full function reliability approved.
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