Datasheet Details
| Part number | SSI3439J |
|---|---|
| Manufacturer | SeCoS Halbleitertechnologie GmbH |
| File Size | 600.40 KB |
| Description | N & P-Ch Enhancement Mode Power MOSFET |
| Datasheet |
 SSI3439J Datasheet
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| Part number | SSI3439J |
|---|---|
| Manufacturer | SeCoS Halbleitertechnologie GmbH |
| File Size | 600.40 KB |
| Description | N & P-Ch Enhancement Mode Power MOSFET |
| Datasheet |
SSI3439J Datasheet
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SSI3439J is N and P Channel enhancement MOS Field Effect Transistor.
It uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
This device is suitable for the use in DC-DC conversion, load switch and level shift.
Elektronische Bauelemente SSI3439J -Ch: 0.75A, 20V, RDS(O ) 380 mΩ P-Ch: -0.
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