Datasheet4U Logo Datasheet4U.com

SSG9973 - N-channel MOSFET

Description

The SSG9973 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

1.27Typ.

Features

  • Simple drive requirement.
  • Low gate charge D1 8 D1 7 D2 6 D2 5 D1 0 o 8 o 1.35 1.75 Dimensions in millimeters D2 Date Code 9973SS G1 G2 1 S1 2 G1 3 S2 4 G2 S1 S2 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS@10V Continuous Drain Current , VGS@10V Pulsed Drain Current 1.2 3 3 Symbol VDS VGS ID@TA=25к ID@TA=70к IDM PD@TA=25к Ratings 60 ±20 3.9 2.5 20 2.0 0.016 Unit V V A A A W W /e C e C Total Power Dissipatio.

📥 Download Datasheet

Datasheet Details

Part number SSG9973
Manufacturer SeCoS
File Size 348.23 KB
Description N-channel MOSFET
Datasheet download datasheet SSG9973 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SSG9973 3.9A, 60V,RDS(ON) 80m£[ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product SOP-8 Description The SSG9973 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. 6.20 5.80 0.25 0.40 0.90 0.19 0.25 45 o 0.375 REF 3.80 4.00 0.35 0.49 1.27Typ. 4.80 5.00 0.100.25 Features * Simple drive requirement * Low gate charge D1 8 D1 7 D2 6 D2 5 D1 0 o 8 o 1.35 1.75 Dimensions in millimeters D2 Date Code 9973SS G1 G2 1 S1 2 G1 3 S2 4 G2 S1 S2 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS@10V Continuous Drain Current , VGS@10V Pulsed Drain Current 1.
Published: |