SSG8N10 mosfet equivalent, n-channel enhancement mode power mosfet.
Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available
MARKING
8N10SC
Date Code
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FEATURES
Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS .
The SSG8N10 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications .
FEATURES
Advanced high cell density Trench technolo.
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