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SSG8N10 Datasheet, SeCoS

SSG8N10 mosfet equivalent, n-channel enhancement mode power mosfet.

SSG8N10 Avg. rating / M : 1.0 rating-11

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SSG8N10 Datasheet

Features and benefits

Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available MARKING 8N10SC Date Code .

Application

. FEATURES Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS .

Description

The SSG8N10 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications . FEATURES Advanced high cell density Trench technolo.

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TAGS

SSG8N10
N-Channel
Enhancement
Mode
Power
MosFET
SSG8603-C
SSG0410
SSG04N15B-C
SeCoS

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