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SSG4228 - Dual-N Enhancement Mode Power MOSFET

Description

SSG4228 is the highest performance trench dual N-ch MOSFETs with extreme high cell density, which provides excellent RDS(ON) and gate charge for most synchronous buck converter applications.

The SSG4228 meet the RoHS and Green Product requirement with full function reliability approved.

Features

  • Advanced high cell density Trench technology Super low gate charge Green Device Available.

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Datasheet Details

Part number SSG4228
Manufacturer SeCoS
File Size 351.45 KB
Description Dual-N Enhancement Mode Power MOSFET
Datasheet download datasheet SSG4228 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SSG4228 8.9A, 30V, RDS(ON) 18 mΩ Dual-N Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SSG4228 is the highest performance trench dual N-ch MOSFETs with extreme high cell density, which provides excellent RDS(ON) and gate charge for most synchronous buck converter applications. The SSG4228 meet the RoHS and Green Product requirement with full function reliability approved. FEATURES Advanced high cell density Trench technology Super low gate charge Green Device Available PACKAGE INFORMATION Package MPQ SOP-8 2.5K Leader Size 13 inch SOP-8 B LD M A HG C JK F N E REF. A B C D E F G Millimeter Min. Max. 5.80 6.20 4.70 5.10 3.80 4.00 0° 8° 0.40 1.27 0.10 0.25 1.27 TYP. REF.
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