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SSG10N10 Datasheet, SeCoS

SSG10N10 mosfet equivalent, n-channel enhancement mode power mosfet.

SSG10N10 Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 1.08MB)

SSG10N10 Datasheet
SSG10N10
Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 1.08MB)

SSG10N10 Datasheet

Features and benefits

Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available MARKING 10N10SC Date Code.

Application

. FEATURES Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS .

Description

The SSG10N10 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications . FEATURES Advanced high cell density Trench technol.

Image gallery

SSG10N10 Page 1 SSG10N10 Page 2 SSG10N10 Page 3

TAGS

SSG10N10
N-Channel
Enhancement
Mode
Power
MosFET
SeCoS

Manufacturer


SeCoS

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