SSG10N10 mosfet equivalent, n-channel enhancement mode power mosfet.
Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available
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10N10SC
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Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS .
The SSG10N10 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications .
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Advanced high cell density Trench technol.
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