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SSG08N10-C - N-Ch Enhancement Mode Power MOSFET

Description

The SSG08N10-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications .

The SSG08N10-C meet the RoHS and Green Product requirement with full function reliability approved.

Features

  • Advanced high cell density Trench technology Super Low Gate Charge Green Device Available.

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Datasheet Details

Part number SSG08N10-C
Manufacturer SeCoS
File Size 579.86 KB
Description N-Ch Enhancement Mode Power MOSFET
Datasheet download datasheet SSG08N10-C Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SSG08 10-C 8A, 100V, RDS(O ) 24mΩ -Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSG08N10-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The SSG08N10-C meet the RoHS and Green Product requirement with full function reliability approved. FEATURES Advanced high cell density Trench technology Super Low Gate Charge Green Device Available PACKAGE INFORMATION Package MPQ SOP-8 2.5K Leader Size 13 inch ORDER INFORMATION Part Number Type SSG08N10-C Lead (Pb)-free and Halogen-free SOP-8 B LD M A H G C N JK FE REF. A B C D E F G Millimeter Min.
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