SSD75N06J mosfet equivalent, n-channel mosfet.
Good stability and uniformity with high EAS High-density cell design for ultra low RDS(ON) Special processing technology for high ESD capability Fully characterized avala.
FEATURES
Good stability and uniformity with high EAS High-density cell design for ultra low RDS(ON) Special processing.
SSD75N06J uses advanced trench technology and design
to provide excellent RDS(on) with low gate charge. It can be used
in a wide variety of applications.
FEATURES
Good stability and uniformity with high EAS High-density cell design for ultra low RDS.
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